Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation

Leakage Current Calibration Procedures of Amorphous Silicon Thin-Film Transistors

Figure 1. (a) Trap occupancy of a trapping level under non-equilibrium conditions (b) probability of occupation (c) conceptual diagram of DOS, probability of occupation, and ionized densities in the a-Si TFTs. Figure 2. Examples of ATLAS simulation results with DEFECT and SAVE TRAP.FILE statements. Introduction Amorphous silicon Thin-Film Transistors (a-Si TFTs) are widely used as the switching...

ZnO-based transparent thin-film transistors

Highly transparent ZnO-based thin-film transistors ~TFTs! are fabricated with optical transmission ~including substrate! of ;75% in the visible portion of the electromagnetic spectrum. Current– voltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ;10. Threshold voltages and channel mobilities of de...

Organic polymer thin-film photo-transistors

We have investigated the effects of illumination, both broadband and monochromatic, on the electrical performance of organic polymer thin-film transistors (OP-TFTs). In each case, providing the illumination is sufficiently absorbed by the organic polymer, the drain current of a device biased in the OFF-state is significantly increased. We have observed increases in the OFF-state drain current a...

Exploration of ZnO and ZnMgO/ZnO Thin Film Transistors

Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistors

Thin Film Transistors based on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO TFT) are receiving a great deal of attention for their numerous applications as alternatives for amorphous and poly-crystalline Silicon based TFTs. A major concern about a-IGZO TFTs is that they suffer from instabilities when subjected to different types of stress (bias, light, etc...). Stress is believed to create defec...